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Molecular beam epitaxial growth and photoluminescence of near-ideal GaAs-AlxGa1−xAs single quantum wells (1985)

Juang, F.-Y. ; Nashimoto, Yasunobu ; Bhattacharya, Pallab K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 1986-1989

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Single quantum wells with ∼120-A(ring) GaAs wells and Al0.3Ga0.7As or GaAs-Al0.3Ga0.7As superlattice barriers were grown by molecular beam epitaxy under conditions known to produce very high-purity material. Low-temperature photoluminescence measurements indicate that the dominant recombination transitions are associated with free and bound excitons involving both light and heavy holes. A forbidden transition, possibly E21h, is also observed. The transition associated with electron-heavy-hole free excitons is most intense and has a linewidth of 0.3 meV at 2 K. The linewidths observed for these samples, grown with As4 species at 630 °C, are the smallest for 120-A(ring) single quantum wells and are close to theoretically calculated limits.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336007

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