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Compensation in heavily doped n-type InP and GaAs (1985)

Anderson, D. A. ; Apsley, N. ; Davies, P. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 3059-3067

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Hall data on vapor-phase-epitaxial InP doped with Si, S, Sn, and Se and liquid-encapsulated-Czochralski InP doped with Ge are presented for doping levels between 1015 and 1019 cm−3. The results show nearly identical electrical behavior for all n-type dopants but a consistent discrepancy with theoretical mobility calculations, particularly in the doping range 1017–1019 cm−3. A chemical analysis of the sulphur content in layers doped with sulphur shows that all the dopant is electrically active. The reason for the discrepancy with the calculation is discussed in terms of the description of ionized impurity scattering in the presence of a high density of ionized centers. We also emphasize the similarity with GaAs and suggest that our conclusions apply equally to both materials.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335831

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