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High-energy conversion efficiency amorphous silicon solar cells by photochemical vapor deposition (1985)

Takei, H. ; Tanaka, T. ; Kim, W. Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 3664-3666

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Hydrogenated amorphous silicon solar cells were fabricated by photochemical vapor deposition. A three-separate-chamber system was newly developed to reduce the contamination of the dopant elements as well as oxygen or water originated by the loading and unloading procedure. Wide optical band-gap hydrogenated amorphous silicon carbide was prepared using acetylene (C2H2) for the p layer. The deposition conditions for each layer were optimized and the highest-energy conversion efficiency of 9.64% was obtained. This high conversion efficiency was mainly attributed to the large short-circuit current which indicated that the quality of the i layer is reasonably good.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335724

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