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Nature of the 1.5040–1.5110-eV emission band in GaAs (1985)

Beye, Aboubaker C. ; Neu, Gérard

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 3549-3555

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A structural analysis of the luminescence spectra of molecular-beam-epitaxy grown GaAs layer, in the energy range 1.5040–1.5110 eV (g-v lines) is reported. At least two distinct recombination processes are distinguished from the selectively excited photoluminescence, not the excitation spectra and the luminescence polarization measurements. The relation of several lines in this emission band with oriented complex defects is established and suggested acting as isoelectronic centers.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335729

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