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Open-circuit voltage-decay behavior in p-n junction diode at high injection (1985)

Gopal, R. ; Dwivedi, R. ; Srivastava, S. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 58 (1985), S. 3476-3480

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The open-circuit voltage-decay of a highly forward biased p-n junction diode switched off abruptly after reaching steady state is studied theoretically for high-level injection. The present theory takes into account the terminal voltage instead of junction voltage as the open-circuit voltage, and is based on ambipolar diffusion phenomenon. The results are in qualitative agreement with the available experimental results for the entire range of decay characteristics.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.335770

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