ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Transient diffusion doping in Si (1986)

Davies, D. Eirug ; Ludington, C. E.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 2035-2037

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Short-term diffusion cycles ∼10 s are shown to be suitable for shallow junction formation in silicon. Phosphorus diffused from a surface film source can produce shallow 1000–2000 A(ring) layers that have surface doping (approximately-greater-than)1020 cm−3. No diffusion enhancement, such as is often associated with similar cycle implantation annealing, has been encountered and layer depths follow the customary square root of time dependence.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336386

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit