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Highly controllable pseudoline electron-beam recrystallization of silicon on insulator (1986)

Hamasaki, T. ; Inoue, T. ; Higashinakagawa, I. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 59 (1986), S. 2971-2976

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: A new electron-beam annealing technique, an amplitude modulated pseudoline electron beam, has been proposed for recrystallization of large-area silicon layers on insulating materials (SOI). The technique utilizes an amplitude modulated sinusoidal wave for high-frequency beam oscillation. Through computer simulation of the temperature distribution for the sample surface, precise control of the position probability density profile of the line beam proved to be essential in realizing wide and uniform annealing. An optimum oscillation waveform was determined from the simulation. A large-area SOI, 4 mm (D'Alembertian), was successfully recrystallized.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.336911

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