ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Identification of intrinsic gettering centers in oxygen-free silicon crystals (1986)

Ueda, O. ; Nauka, K. ; Lagowski, J. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 622-626

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Intrinsic gettering centers in oxygen-free silicon crystals after a high–low–medium-temperature annealing cycle were successfully identified using transmission electron microscopy and energy dispersive x-ray spectroscopy. These centers have a butterfly-type shape and they consist of interstitial-type extended multiple dislocation loops in {110} planes of 0.1–0.7 μm diameter and a high density of small 3–15-nm-diam precipitates located inside the dislocation loops and/or on the dislocation line. Compositional x-ray analysis identified Cu as the predominant metal component of the precipitates. Occasionally Ni and very rarely Fe were also detected.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337458

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit