ALBERT — All Library Books, journals and Electronic Records Telegrafenberg

Hits per page

hit 1 - 1 | 1 hit

Select All Export

Electronic Resource

Photochemical vapor deposition of hydrogenated amorphous silicon films from hydrogen diluted monosilane (1986)

Mutsukura, Nobuki ; Katoh, Yoshiki ; Machi, Yoshio

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 3364-3366

add to mindlist on the mindlist

Details

ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Mercury-photosensitized photochemical vapor deposition of hydrogenated amorphous silicon films was carried out for H2-diluted SiH4 source material using 2537-A(ring) light excitation. The deposition rate of the amorphous silicon film increased with increasing H2 volume in the source and exhibited a maximum for a 30% SiH4 source. Substrate temperature dependence in the deposition rate increased for a large amount of H2 in the source as compared with a pure SiH4 source. This result was applied to prevent transparency loss in a quartz window used to introduce the excitation light into the reaction zone.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337705

	Location	Call Number	Expected	Availability

Others were also interested in ...

Paper (German National Licenses)

Fulltext

hit 1 - 1 | 1 hit