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Effects of rapid thermal processing on thermal oxides of silicon (1986)

Lee, S. K. ; Kwong, D. L. ; Alvi, N. S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 60 (1986), S. 3360-3363

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The effects of rapid thermal processing (RTP) on the electrical properties of thin gate oxides in metal-oxide-semiconductor (MOS) devices have been studied. MOS capacitors have been analyzed by current-voltage (I-V) and constant current stress techniques. MOS field-effect transistors (MOSFETs) have been fabricated using RTP for the post-implant anneal, and the transistor degradation due to hot carrier injection has also been investigated. No significant RTP-induced degradation was detected in any category of the device properties considered here. An abnormal trapping behavior was observed on the wafer annealed at high temperature and/or long duration.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.337704

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