Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 5483-5485
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The EL2 distribution showed a clear correlation to both the resistivity and the characteristics of field-effect transistors. It was observed that the nonuniformity of the characteristics of field-effect transistors was not improved by annealing, though those of both EL2 and the resistivity were improved by annealing. It is probable that the nonuniformity is related to the grown-in inhomogeneity in the distribution of native defects other than EL2. The importance of minimizing such an inhomogeneity in the growth process has been confirmed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338242
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