ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The built-in potential, the distribution of the potential barrier between both semiconductors, the depletion widths, and the electric field at the interface have been evaluated in an n-amorphous/p-crystalline silicon heterojunction. V-shaped and U-shaped distributions have been adopted to approximate the density of states in the gap of amorphous silicon. Flat Fermi levels were assumed across both depletion regions. The results were compared to those of crystalline silicon homojunctions with identical doping levels.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.338217