Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
61 (1987), S. 3152-3154
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Double- and multiple-layered Co-Cr thin films have been prepared to clarify the dominant factors in the c-axis orientation at the early stage of the film growth. The optimized process condition in the facing-targets sputtering system is likely to promote the c-axis self-orientation in the films since they can grow on the plasma-bombardment-free substrate. This effect was confirmed by depositing the films on the poorly oriented Co-Cr film as the underlayer. Meanwhile, when the well-oriented Co-Cr thin film was used as the underlayer, a continuous growth of crystallites resulted in the improvement of the c-axis orientation in the growing film even under process conditions unfavorable for depositing the well-oriented films. This Co-Cr underlayer effect continues until the thickness of the depositing film reaches about 2000 A(ring), suppressing the influence of the unfavorable sputtering condition.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.337823
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