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Orientation control of the silicon film on insulator by laser recrystallization (1987)

Sugahara, K. ; Kusunoki, S. ; Inoue, Y. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 62 (1987), S. 4178-4181

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We have studied the influence of the growth direction and the solidification speed on crystal quality of the silicon-on-insulator (SOI) film by laser recrystallization. In a 〈100〉 direction on a {100} Si substrate, lateral epitaxial growth of single-crystal regions from a seed extended as much as 1 mm. It was found that the crystalline orientation of the SOI film changes continuously from {100} toward {110}. These results indicated that the quality of the SOI film is strongly affected by the crystallographic arrangement of the growth front relative to the composition of {111} faceted planes. A new recrystallization method for large area SOI films was developed by stabilizing the growth front.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.339085

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