ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The open-circuit photovoltages (Voc) of a-Si:H solar cells having a Glass/TCO/p-i-n a-Si:H/metal structure were examined as a function of the thickness of the n layer. The Voc stayed constant at ∼0.8 V, irrespective of the kind of metals, as far as the thickness of the n layer was larger than 15 nm, but dropped when the n layer got thinner. This effect was the stronger, the smaller the work function of the metal. The decrease of Voc is attributed to complete depletion of the n layer, leading to the reduction of the potential gradient in the i layer. The effects of the metal/P-doped a-Si:H junction were further investigated using cells having a Glass/TCO/n-i-n/metal structure and different doping concentrations for the latter n layer. The results obtained supported the above-mentioned conclusion.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339306
