Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
62 (1987), S. 3267-3277
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The problem of equilibrium barrier formation in graded Hg1−xCdxTe heterojunctions is solved with the use of a highly accurate computer model. The present calculation incorporates several features designed to improve on past efforts. The Poisson equation is solved as a nonlinear integro-differential equation. Fermi–Dirac statistics are used to allow for the degeneracy associated with inversion for narrowly graded junctions and the degeneracy of the native defect donors. The band structure is obtained from the numerical solution of the secular equation. Fermi–Dirac statistics are taken to govern the degree of ionization of the acceptors and acceptorlike traps. Acceptors are treated as divalent flaws and their ionization energies as linear functions of the cadmium composition. The results are compared to the recent work of Bratt and Casselman [J. Vac. Sci. Technol. A 3, 238 (1985)], and the earlier work of Migliorato and White [Solid-State Electron. 26, 65 (1983)]. Significant differences are found. The results and differences are analyzed. Further computations are made in order to investigate the impact of elevated temperatures and the interdiffusion of doping concentrations along with compensation effects. It is shown that even a smeared p-n junction can have an advantageous effect.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.339333
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