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Current transport in strained n-Si1−xGex/p-Si heterojunction diodes (1988)

Willander, Magnus ; Shen, Guang-Di ; Xu, Dan-Xia ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 5036-5039

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The measurement and analysis of I-V characteristics from molecular beam epitaxially grown Si0.9Ge0.1/Si p-n diodes are presented. When a diode is forward biased the current transport is mainly injection diffusion of the holes and defect recombination within the depletion region of the n side. At reverse bias, the current comes from tunneling of holes from the top of the p-type valence band to the n-type conduction band, and also to the interface states followed by multistep recombination tunneling via defect states in the depletion region of the n side. The forward voltage drop was found to be much lower than that of Si diodes. Electron irradiation damages have opposite effects on the forward-biased I-V characteristics of Si0.9Ge0.1/Si diodes as compared to the effects observed for Si diodes.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.340451

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