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Frequency characteristics of the Mn-doped InP p-n junction (1988)

Takanohashi, T. ; Tanahashi, T. ; Sugawara, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 1961-1963

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Admittance spectroscopy is applied to the analysis of the thermal properties of the Mn acceptor-doped InP grown by liquid-phase epitaxy. The thermal activation energy and capture cross section are determined as ΔET=183 meV and σp=1.8×10−13 cm2, respectively. The cutoff frequency of the emission of holes from the Mn acceptor is 1 GHz at 300 K. It is shown that the small signal frequency characteristic of a buried heterostructure laser is improved at frequencies f〉1 GHz by using the Mn-doped p-InP layer for the current blocking region.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341094

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