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Photopumped single quantum-well laser structures (1988)

Waters, R. G. ; Guido, T. S.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 63 (1988), S. 4764-4765

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Amplified spontaneous emission involving the n=1 and n=2 confined states is observed at room temperature in GaAs graded-barrier single quantum-well laser material grown by metalorganic chemical vapor deposition. These no-phonon, parity-allowed emission lines correlate well with computed transition energies.The duality of lines, their strength and sharpness, and the absence of undesirable substrate luminescence permit a specification of the quantum-well width. This validation, in conjunction with other wafer-level evaluations, provides a more complete characterization of laser material intended for fabrication.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.340113

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