ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We use a highly accurate numerical computer model to solve the problem of equilibrium barrier formation in graded Hg1−xCdxTe heterojunctions including valence-band offsets. The present calculation is an extension of our previous work [J. Appl. Phys. 62, 3267 (1987)], which incorporated physical features designed to improve upon previous calculations, but employed the common anion rule. First, we analyze and compare our results to the recent work of Oda [Infrared Phys. 27, 49 (1987)] and find significant differences. Then, we make a comparison with the results of our previous work. We observe clear trends between our results with and without the valence-band offset. Unlike Oda, we do not make general predictions with regard to the conditions needed to support the formation and growth of a barrier in the conduction band, but instead find the band profiles to be a complex function of all the junction design parameters. For the present study involving narrow gap p on wide gap n heterojunctions, and the assumed: HgTe:CdTe 300-meV valence-band offset, the band profiles do not differ significantly from the profiles assuming the common anion rule.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.342073
