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The effects of gas ambients on the formation of surface and bulk defects in silicon (1988)

Kang, J. S. ; Schroder, D. K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 6673-6678

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The effects of gas ambients on the density of oxide precipitates and stacking faults have been studied in samples annealed in various gas ambients. It is found that the densities of oxide precipitates and bulk and surface stacking faults in oxynitrided samples are higher than those of samples annealed in oxygen, nitrogen, trichloroethane plus oxygen, and pure ammonia. Also, stacking faults have been observed at the surface of the samples annealed in an ammonia ambient. These observations are contrary to our expectations, and several models are proposed to explain the phenomena.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.342022

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