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Deep radiative levels in as-grown and implanted rapid thermal annealed InP (1988)

Rao, Mulpuri V. ; Aina, Olaleye A. ; Fathimulla, Ayub ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 64 (1988), S. 2426-2433

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Deep radiative levels in as-grown and Si-, Be-, and Hg-implanted InP:Fe activated by rapid thermal annealing are studied by photoluminescence measurements. A broadband centered at 1.07 eV is observed in unimplanted InP:Fe. The 1.17- and 0.775-eV peaks in the spectra of Si-implanted InP:Fe, and the 0.861-eV peak in the spectra of Be-implanted InP:Fe are believed to be due to the dopant-defect complexes. In Hg-implanted samples HgIn acceptor related peak is observed at 1.329 eV with longitudinal optical phonon peaks at 1.286 (1-LO) and 1.244 eV (2-LO). A peak at 0.919 eV is observed as an intrinsic peak in all InP samples. A single peak or several peaks with shoulders are also observed in the range 0.65–0.725 eV in many InP samples.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.341677

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