Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
64 (1988), S. 4755-4759
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Multiple-energy H-, He-, and B-ion bombardments were performed to obtain uniform high resistivity over the entire thickness of p-type In0.53Ga0.47As. High resistivity, 580 Ω cm, which is close to the intrinsic resistivity limit of ≈103 Ω cm in InGaAs, is observed. The thermal stability of the high-resistance layers depended upon the mass of the implanted ion. The B-ion-implanted layers maintained high resistivity up to ≈200 °C. Photoluminesence measurements were used to obtain the energy of compensating levels produced by light-ion bombardment.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.341191
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