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Light emission from high bias Al-AlOx-Au tunnel junctions (1989)

Shu, Q. Q. ; Wen, W. J. ; Xu, S. J.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 373-375

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: An observation of the Al-AlOx-Au light emitting tunneling junctions deposited on the underlayers of CaF2 has been made. The applied bias can be up to 5.12 V at room temperature, and the efficiencies were in the 10−4 range and one order higher than before. The emission spectra are characterized by the cutoff frequency near 3.26 eV and the lack of the emission from the radiative mode of surface plasmon polariton.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.342550

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