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The X-valley transport in GaAs/AlAs triple barrier structures (1989)

Cheng, Peng ; Park, Byung Gook ; Kim, Sam-dong ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 5199-5201

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Electron transport through the X valley of GaAs/AlAs triple-barrier structures (TBS) grown by molecular-beam epitaxy has been studied. Negative differential resistance is observed at 77 K in one type of TBS and is identified as the result of electron transport through both the Γ and X valleys of TBS. In another type of TBS, resonant tunneling through the X valley of GaAs/AlAs TBS is observed. The Γ and X energy-band profiles under bias have been calculated in order to identify the observed features.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343151

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