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Digitale Medien

Metastable defects in Be-doped AlxGa1−xAs (1989)

Magno, R. ; Shelby, R. ; Kennedy, T. A. ; [weitere]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 4828-4831

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Details

ISSN: 1089-7550

Quelle: AIP Digital Archive

Thema: Physik

Notizen: Deep-level transient spectroscopy has been used to study metastable defects in Be-doped Alx Ga1−x As grown by molecular-beam epitaxy. The metastability manifests itself by the appearance of different spectra depending upon whether the sample is cooled from a high temperature with zero bias or a reverse bias applied to it. The defects are found in concentrations of 1015 cm−3 in a sample doped with 1018 Be cm−3 and in much lower concentrations in a 1017 Be cm−3 sample. Isochronal annealing experiments indicate that the defect is multistable and that it is best modeled as a mobile interstitial which can reside at several sites near an acceptor. The activation energies for these defects are between 0.2 and 0.5 eV above the valence band.

Materialart: Digitale Medien

URL: http://dx.doi.org/10.1063/1.343216

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