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Interfacial reactions on annealing molybdenum-silicon multilayers (1989)

Holloway, Karen ; Do, Khiem Ba ; Sinclair, Robert

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 65 (1989), S. 474-480

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The structure and interfacial reaction in sputtered Mo-Si multilayers have been studied using cross-section transmission electron microscopy, electron diffraction, Rutherford backscattering, and low-angle x-ray diffraction. Low-temperature (T〈550 °C) annealing was performed in a rapid-thermal-annealing furnace and in situ in the microscope. No solid-state amorphization was observed, in spite of the presence of amorphous alloy interfacial layers in the as-deposited structure. Instead, the amorphous interlayers crystallize, and growth of the crystalline product, hexagonal-MoSi2, proceeds. The bilayer period contracts during the reaction, as the disilicide is more dense than its constituents.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343425

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