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Damage of silicon in low-energy Ar discharge studied by photoinduced modulation absorption (1989)

Chen, F. Y.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 973-974

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The damage of silicon processed by low-energy (70 eV) Ar discharge was investigated by the technique of photoinduced modulation absorption. It was found that low-energy Ar discharge causes damage that enhances the surface recombination velocity at the processed surface and reduces the carrier diffusion constant in the bulk. However, no significant change of the bulk carrier lifetime was found.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.343477

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