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InGaAs/InAlAs(Si) modulation-doped heterostructures intentionally lattice mismatched to InP substrates (1989)

Harmand, J. C. ; Matsuno, T. ; Inoue, K.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 2633-2636

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Modulation-doped InyAl1−yAs/InxGa1−xAs heterostructures were grown on InP substrates by molecular beam epitaxy. With the aim of increasing the InAs mole fraction of the InGaAs layer, the epilayers were intentionally lattice mismatched with respect to the substrate. The samples were characterized by optical microscopy, x-ray analysis, and the van der Pauw method. In a structure with x=0.68, y=0.67, and a 0.5-μm-thick InyAl1−yAs buffer layer, Hall mobilities as high as 13 140 cm2/V s and 78 000 cm2/V s were measured at 300 and 77 K despite an estimated dislocation density of 2×105 cm−1 in a 〈110〉 direction at the substrate-epilayer interface.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.344230

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