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Diffusion length and lifetime in highly Ga-doped PbSnTe layers grown by liquid-phase epitaxy (1989)

Shahar, A. ; Feit, Z. ; Zussman, A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 2455-2457

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Minority-carrier diffusion length of a highly Ga-doped Pb0.78Sn0.22Te (n=1.5×1019 cm−3) liquid-phase epitaxy grown layer was measured between 10–80 K using a light spot scanning technique on a beveled diode. The carrier lifetime, derived from the observed diffusion length, and the measured mobility is shown to be dominated by Auger recombination. The effect of Ga and In heavy doping on the spectral response of homostructure PbSnTe diodes is demonstrated. The advantage of Ga over In as an n-type dopant of the cladding layer of PbSnTe homostructure lasers is discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.344256

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