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Formation of PtSi in the presence of Al and a Cr barrier layer (1989)

Chang, Chin-An

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 2363-2366

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The effect of Cr as a barrier between PtSi and Al is studied by analyzing the reactions of the Al/Cr/Pt/Si (2000 A(ring)/1000 A(ring)/1000 A(ring)/Si substrate) structures. Electrical measurement shows a rapid rise in sheet resistance after annealing at 400 °C. Structural analysis shows extensive reactions between Al and Cr at such temperatures. The PtSi formed remains little changed until 550 °C, and is converted to PtAl2 at higher temperatures. The results are compared with those using W, Ti-W, and carbon barriers, and the roles of barrier materials on the stability of the Al/PtSi metallurgy are discussed.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.344268

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