Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 3410-3412
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Silicon nitride films have been prepared at room temperature using a microwave multipolar plasma chemical vapor deposition system. In situ kinetic ellipsometry during deposition and ex situ measurements such as infrared absorption or spectroscopic ellipsometry have been used to investigate the dependence of film composition and properties on the flow ratio SiH4/NH3 and on the total pressure. Depending on the silane partial pressure, the films contain a variable amount of oxygen or amorphous silicon which directly affects the electrical properties.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344093
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