Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
66 (1989), S. 3092-3096
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
We calculate the charge pumping current of a metal-oxide-semiconductor transistor in the time domain utilizing a transient two-dimensional device simulation. The dynamics of the interface states are included in the solution of the time-dependent problem with full self-consistency. The calculated charge pumping curve is in good agreement with the experiment, especially the rise and fall patterns of the signal, which are very sensitive to the source/drain profiles in small devices. The extraction of the density of states shows the range of validity of the analytical models and their restrictions. The influence of hot-carrier stress on the charge pumping signal, which relates to inhomogeneous spatial distribution of interface states and fixed oxide charges, is also discussed in experiment and simulation.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.344166
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