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Modeling the diffusion of hydrogen in GaAs (1989)

Morrow, Richard A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 66 (1989), S. 2973-2979

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Concentration depth profiles of carriers (or of electrically active defects) and/or deuterium in GaAs following exposure to a hydrogen plasma (or, in one case, to molecular hydrogen) are fit using a simple diffusion model with second-order reactions. We find that (1) the activation energy for hydrogen diffusion and the dissociation energies of hydrogen-defect complexes are dependent on the concentration of hydrogen, (2) there is no molecular hydrogen formation and no fast-diffusing species of hydrogen away from the near-surface region, and (3) atomic hydrogen can in-diffuse and passivate EL2 defects when semi-insulating GaAs is annealed at a high temperature in a molecular hydrogen ambient.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.344179

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