Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 1132-1134
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
In0.45Ga0.55As/GaAs/AlGaAs quantum well lasers emitting at 1100 nm have been fabricated and evaluated. These devices, which employ a highly strained quantum well region, exhibit low- (250 A/cm2) threshold current density and excellent reliability both of which were hitherto unattainable at such high In mole fractions.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345758
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