Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
67 (1990), S. 1483-1491
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Several novel features are observed in the low-temperature photoluminescence spectra of AlxGa1−xAs layers grown on GaAs by metalorganic chemical vapor deposition. GaAs substrate luminescence spectra are observed through AlxGa1−xAs layers as thick as 22 μm. Both carrier diffusion to the substrate and AlxGa1−xAs luminescence are identified as the excitation mechanisms of the GaAs luminescence, and a minority-carrier diffusion length of 10 μm is estimated. The presence of photon recycling in the AlxGa1−xAs layers is demonstrated by comparison of photoluminescence (PL) spectra for layers with and without GaAs substrates, as well as PL examination of two AlxGa1−xAs heterostructures.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.345656
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