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Field-effect transistor structure based on strain-induced polarization charges (1990)

Kuech, T. F. ; Collins, R. T. ; Smith, D. L. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 67 (1990), S. 2650-2652

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We suggest a new field-effect transistor structure based on strain-induced polarization charges. The structure utilizes the pseudomorphic growth of a barrier layer on a substrate oriented in a polar direction (i.e., 〈111〉, 〈211〉, ...). Polarization charges in the large band-gap material are generated by the piezoelectric effect. A two-dimensional electron gas, whose density can be modulated by an external bias, forms at the heterointerface to screen the polarization charges. Zero-bias densities of several times 1011 e/cm−2 and turn-off threshold voltages of 0.5 V can be achieved in the (Ga,In)As-(Al,In)As model system. Both normally-on and normally-off structures are possible.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.345474

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