Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 5385-5387
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
About 85% of Ga implanted into As doped Si, about 80% of that into Sb doped Si, and about 78% of that into P doped Si were lost into atmosphere during annealing at 950 °C for 30 min. The number lost depended on impurities in native oxide films on the Si surfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.347018
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