ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Data are presented describing the incorporation of Si in locally laser-melted AlxGa1−xAs-GaAs quantum well heterostructures from a thin-film dielectric source. The composition of the melted material, the effects of the Si source (SiO2 or Si3N4) on impurity incorporation, and the doping behavior are examined via secondary-ion mass spectroscopy, electron dispersion x-ray spectroscopy, transmission electron microscopy, and scanning electron microscopy. The data indicate that upon melting, a (Si)y(AlxGa1−xAs)1−y alloy is formed from which impurity-induced layer disordering may be effected. After annealing the melt region is found to contain crystalline segregates, which are attributed to rapid thermal quenching of the melt. Applications of these results to the fabrication of buried-heterostructure lasers by laser-assisted disordering are discussed.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346907
