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Optimum (Cs,O)/GaAs interface of negative-electron-affinity GaAs photocathodes (1990)

Lu, Qing-Bin ; Pan, Yong-Xi ; Gao, Huairong

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 68 (1990), S. 634-637

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Negative-electron-affinity GaAs photocathodes have been improved by optimizing the (Cs,O)/GaAs interface. An optimum interface can be obtained by annealing the preoxygenated substrate surface at elevated temperatures (∼450 °C) prior to the (Cs,O) activation. Furthermore, the results of experiments with the aid of x-ray photoelectron spectroscopy demonstrate that the direct bonding of oxygen to substrate atoms is most likely the origin of the interfacial barrier to electron escape.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.346791

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