Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
68 (1990), S. 4604-4609
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A detailed optical study of the metastable III/V semiconductor alloy InP1−xSbx is presented. InP1−xSbx layers are grown throughout the entire compositional range by atmospheric pressure organometallic vapor phase epitaxy on InP, InAs, and InSb substrates. Composition and strain are measured by combined electron microprobe analysis and x-ray diffractometry. The dependence of band gap on composition is experimentally established for the first time from absorption spectra measured at 10 and 300 K. The resultant value of the band-gap bowing parameter is 1.52±0.08 eV, independent of temperature. The absorption spectra show the InP1−xSbx layers to have long band tails, which extend further into the gap as the Sb concentration is increased. The band tails are induced by compositional clustering. Photoluminescence (PL) spectra are measured between 10 and 300 K. The PL peaks are assigned to recombination between carriers occupying band-tail states or to recombination via deep centers in the gap.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.346169
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