Digitale Medien
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
69 (1991), S. 1469-1474
ISSN:
1089-7550
Quelle:
AIP Digital Archive
Thema:
Physik
Notizen:
Low-temperature photoconductive mixing measurements have been performed on n- and p-type compensated Si at a microwave beat frequency of 253 MHz. The dependence of the transport parameters (electron-hole recombination lifetime and drift velocity) on temperature and electric field obtained from this experimental technique, are discussed. At high temperatures (T≥35 K for n-type and T≥60 K for p-type), the drift velocity is determined by neutral impurity and ionized impurity, and charge carrier-phonon scattering. In the carrier freeze-out regime (T≤35 K for n-type, T≤60 K for p-type) hopping charge transport is the dominant mechanism determining the drift velocity.
Materialart:
Digitale Medien
URL:
http://dx.doi.org/10.1063/1.347288
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