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Comparison of defects produced by 14-MeV neutrons and 1-MeV electrons in n-type silicon (1991)

Chaudhari, Pratima ; Bhoraskar, S. V. ; Padgavkar, Swarupa ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 70 (1991), S. 1261-1264

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Defects produced in lightly doped crystalline silicon by 1-MeV electrons and 14-MeV neutrons are studied. Deep level transient spectroscopy (DLTS) and Hall voltage measurements have been used for investigating the energy depth, nature, and density of radiation-induced defects. The extent of damage caused by 14-MeV neutrons is found to be comparatively high as inferred from the continuous distribution of gap states in the DLTS measurement. Identical defects were observed in both cases where the A-center (Ec−0.17 eV), E-center (Ec−0.39 eV), and divacancy (Ec−0.23 eV) were prominent. An additional defect level (Ec−0.86 eV) was observed from DLTS for neutron-irradiated samples.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.349581

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