ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The variation of the Schottky barrier height ΦB of Au/n-CdTe contacts with the Cd/Te ratio at the substrate's surface has been investigated. X-ray photoelectron spectroscopy measurements show that this ratio increases with the anneal temperature Ta up to 330 °C. The Schottky barrier height reaches a maximum for near stoichiometric substrates. Mixed regions of Te and Au, due to etching and subsequent surface disruption by Au, determine ΦB at low Ta. The ΦB value as expected for the ideal Au/n-CdTe contact (following the work-function model) is found for stoichiometric surfaces. At high Ta an increasing nonstoichiometry produces decreasing ΦB values. Our measurements show that the interfacial reactivity decreases with the number of defects. This offers us a general explanation for the observed ΦB behavior, based upon reactivity at nonstoichiometric surfaces.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349458
