Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
70 (1991), S. 3115-3126
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
Detailed synchrotron radiation photoemission studies of Yb/Hg1−xCdxTe junctions as a function of Yb coverage were performed at room temperature. Photoemission from physisorbed xenon after cooling the sample to 35 K was also used to examine the local overlayer work function and the development of interface morphology. For Yb coverages less than 6 A(ring), the data provide evidence for the lateral growth of islands consisting of Yb-Te reaction products involving divalent Yb, and an associated Hg depletion within an 18-A(ring)-thick near-surface layer. Upon island coalescence at an Yb coverage of 6 A(ring), the formation of a metallic Yb-rich layer at the surface is observed. This layer traps Hg atoms diffusing across the interface through the formation of an Yb-Hg alloy, and is responsible for the nonmonotonic behavior of the Hg interface concentration as a function of Yb coverage.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.349290
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