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Oxygen-induced Al surface segregation in AlxGa1−xAs and the effect of Y overlayers on the oxidation of the Y/AlxGa1−xAs interface (1992)

Mesarwi, A. ; Ignatiev, A.

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 71 (1992), S. 1943-1948

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: The oxidation of AlxGa1−xAs (x=0.15, AlGaAs) was studied by Auger electron spectroscopy and x-ray photoelectron spectroscopy at 350 °C and different oxygen exposures (up to 5×104 L). Also studied were the effects of yttrium overlayers (θ=3 ML) on the oxidation of the AlGaAs surface. Substantial oxygen-induced Al surface segregation has been observed for both yttriated and non-yttriated AlGaAs surfaces which increased with increasing oxygen exposure. Also observed is a significant Y-enhanced oxidation of the AlGaAs surface. Oxidation of the yttriated AlGaAs surface was found to be a factor of 4 greater than that of the non-yttriated surface. Also, while oxidation of the non-yttriated AlGaAs yielded mainly Al2Ox (x〈3) and only little Ga2O3, the yttriated AlGaAs surface oxide layer was principally Ga2O3 and stoichiometric Al2O3. However, both the yttriated and non-yttriated surfaces were found to contain metallic As within the oxide layer.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351184

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