Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 762-765
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
A new technique for bonding sulfur atoms to gallium arsenide surfaces is described. In this technique the surface is exposed to gas-phase atomic sulfur at 60–70 °C. The resulting surfaces were characterized by angle-dependent x-ray photoelectron spectroscopy. The data show that, in contrast to passivation of GaAs by H2S at low temperatures, this technique yields a surface on which the sulfur is almost exclusively bonded only to gallium atoms.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.351808
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