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Properties of the planar poly(3-octylthiophene)/aluminum Schottky barrier diode (1992)

Assadi, A. ; Svensson, C. ; Willander, M. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 2900-2906

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: Formation and characterization of planar polymer Schottky barrier diodes are presented. Electrical characteristics of planar aluminium-poly(3-octylthiophene) Schottky barrier diodes are studied with emphasis on the current transport mechanisms. The device exhibits nearly ideal diode behavior in dark with an ideality factor of n=1.2. Temperature dependence of the current-voltage characteristics of the diode is studied in the range 170–370 K. Agreement with the diffusion theory of metal-semiconductor rectification is demonstrated for high temperatures T(approximately-greater-than)300 K. For temperatures less than room temperatures tunneling is proposed to be the dominant current transport mechanism.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351491

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