Electronic Resource
[S.l.]
:
American Institute of Physics (AIP)
Journal of Applied Physics
72 (1992), S. 3634-3640
ISSN:
1089-7550
Source:
AIP Digital Archive
Topics:
Physics
Notes:
The results of paramagnetic defect and positive fixed oxide charge creation in x-irradiated buried SiO2 formed by ion implantation and annealing are presented. Charged oxygen-vacancy centers are argued to be the source of spin active defects but not the primary source of fixed oxide charge. Hydrogenation or fluorination of the oxide enhances the radiation sensitivity for creation of spin active defects but not of trapped positive charge. Annealing of the spin active defects may proceed by a mechanism similar to that involved in charged defect annealing or by the trapping of thermally detrapped, diffusing electrons. Annealing does not involve the trapping of diffusing molecular species as is usual in bulk oxides.
Type of Medium:
Electronic Resource
URL:
http://dx.doi.org/10.1063/1.352306
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