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Growth mechanisms of CdTe during molecular beam epitaxy (1992)

Litz, Th. ; Behr, Th. ; Hommel, D. ; [et al.]

[S.l.] : American Institute of Physics (AIP)

Journal of Applied Physics 72 (1992), S. 3492-3496

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ISSN: 1089-7550

Source: AIP Digital Archive

Topics: Physics

Notes: We report here on studies of the growth mechanism of CdTe during molecular beam epitaxy on (100) oriented CdTe substrates by reflection high energy electron diffraction (RHEED). The growth rate of CdTe as a function of the Cd/Te ratio in the impinging molecular beam was investigated in detail. The growth rates were determined by RHEED intensity oscillations. Fluxes were calibrated by film thickness measurements. From the growth rates dependence on the Cd/Te flux ratio we determined the Cd and Te sticking coefficients by comparing the results with kinetic models of molecular beam epitaxial growth. Both Cd and Te sticking coefficients are dependent on the surface concentration of free Cd and Te sites, respectively. The main result is that the influence of a precursor state has to be taken into account to describe the experimental results.

Type of Medium: Electronic Resource

URL: http://dx.doi.org/10.1063/1.351426

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